纳米晶Cu3SnS4的制备与带隙调整

摘要/Abstract

摘要： P型半导体Cu3SnS4具有较高的空穴浓度、较大的光吸收系数和较宽的带隙值范围，在气敏传感器、染料敏化太阳能电
池、热电转换等领域具有极高的应用价值。然而，由于其结构的多样性和较宽的带隙值范围，需要根据实际用途进行优化和调
整。综述近年来纳米晶Cu3SnS4的制备和带隙调整方法，对磁控溅射法、溶剂热法、球磨法等工艺制备纳米晶薄膜和粉体，以及
利用调控晶体结构和掺杂调整带隙的方法进行总结归纳，对纳米晶Cu3SnS4的研究提出展望。

关键词: Cu3SnS4, 晶体结构, 带隙, 掺杂

Abstract: As a P-type semiconductor, Cu3SnS4 has significant application value in the fields of gas sensors, dye sensitized solar cells,
thermoelectric conversion and so forth due to its high hole concentration, high light absorption coefficient and wide range of bandgap.
However, due to its structural diversity and wide bandgap value range, it needs to be optimized and tuned according to actual use. This article reviews the preparation and bandgap tuning methods of nanoscale Cu3SnS4 in recent years, summarizes the preparation methods of nanoscale films and powders, such as magnetron sputtering, solvothermal, ball milling and other processes, as well as the bandgap tuning methods of crystal structure controlling and doping of nanoscale Cu3SnS4. In the end, the prospect for the research of nanocrystalline Cu3SnS4 is put forward.

Key words: Cu3SnS4, crystal structure, bandgap, doping

胡永茂, 赵占强, 谢再新, 段卓琦, 周豹, 李汝恒. 纳米晶Cu3SnS4的制备与带隙调整[J]. 大理大学学报, 2021, 6(6): 22-28.

Hu Yongmao, Zhao Zhanqiang, Xie Zaixin, Duan Zhuoqi, Zhou Bao, Li Ruheng. Preparation and Bandgap Tuning of Nanoscale Cu3SnS4[J]. Journal of Dali University, 2021, 6(6): 22-28.

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