Preparation and Bandgap Tuning of Nanoscale Cu3SnS4

Abstract

Abstract: As a P-type semiconductor, Cu3SnS4 has significant application value in the fields of gas sensors, dye sensitized solar cells,
thermoelectric conversion and so forth due to its high hole concentration, high light absorption coefficient and wide range of bandgap.
However, due to its structural diversity and wide bandgap value range, it needs to be optimized and tuned according to actual use. This article reviews the preparation and bandgap tuning methods of nanoscale Cu3SnS4 in recent years, summarizes the preparation methods of nanoscale films and powders, such as magnetron sputtering, solvothermal, ball milling and other processes, as well as the bandgap tuning methods of crystal structure controlling and doping of nanoscale Cu3SnS4. In the end, the prospect for the research of nanocrystalline Cu3SnS4 is put forward.

Key words: Cu3SnS4, crystal structure, bandgap, doping

Hu Yongmao, Zhao Zhanqiang, Xie Zaixin, Duan Zhuoqi, Zhou Bao, Li Ruheng. Preparation and Bandgap Tuning of Nanoscale Cu3SnS4[J]. Journal of Dali University, 2021, 6(6): 22-28.

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