J4 ›› 2012, Vol. 11 ›› Issue (4): 32-34.

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Effect of Stain on Band Structure of InxGa1-xAs

The change of emerge-band gap of InxGa1-xAs ternary alloys grown on GaAs substrate was calculated theoretically. The band structure of epitaxial layer was affected by strain due to differences between the film and substrate lattice constants. Strains in the layer varied almost linearly with composition. It was indicated that the bandgap of strained InxGa1-xAs increased and valence band splitting occurred, compared to unstrained materials. This makes it possible to control the bandgap by altering the alloys composition and hence strain. It is useful to the devices design.   

  1. College of Engineering，Dali University，Dali，Yunnan 671003，China
  • Received:2011-04-02 Revised:2011-10-24 Online:2012-04-15 Published:2012-04-15

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Abstract:

The change of emerge-band gap of InxGa1-xAs ternary alloys grown on GaAs substrate was calculated theoretically. The band structure of epitaxial layer was affected by strain due to differences between the film and substrate lattice constants. Strains in the layer varied almost linearly with composition. It was indicated that the bandgap of strained InxGa1-xAs increased and valence band splitting occurred, compared to unstrained materials. This makes it possible to control the bandgap by altering the alloys composition and hence strain. It is useful to the devices design.

Key words: InxGa1-xAs, band structure, lattice constants, strain

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